Photovoltaic power converting III–V semiconductor devices based on the Vertical Epitaxial
HeteroStructure Architecture (VEHSA) design have been achieved with up to 20 thin p/n …

Photon‐recycling effects are studied experimentally in photovoltaic power converting III–V
semiconductor devices designed with the vertical epitaxial heterostructure architecture …

Optical to electrical power converting semiconductor devices were achieved with
breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture …

This review outlines a series of developments in the design, modelling and growth of multi-
junction laser power converters, including several observations of multi-junction GaAs …

A six-volt vertically-stacked, high current GaAs photovoltaic power converter (PPC) has been
designed and fabricated to produce output power over 1 W under monochromatic …

A monolithic compound semiconductor phototransducer optimized for narrow‐band light
sources was designed for achieving conversion efficiencies exceeding 50%. The III‐V …

The recent development of 2D monolayer lateral semiconductor has created new paradigm
to develop p‐n heterojunctions. Albeit, the growth methods of these heterostructures …

Heterostructures based on atomically thin semiconductors are considered a promising
emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells on …

GaAs nanowires (NWs) offer the possibility of decoupling light absorption from charge
transport for high-performance photovoltaic (PV) devices. However, it is still an open …

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application
technology is extensively investigated. However, most devices are mainly based on …