Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally
results in an increase in the bandgap energy and is accompanied by changes in the …

Wavelength-agile photonic integrated circuits are fabricated using a one-step ion
implantation quantum-well intermixing process. In this paper, we discuss, the issues in …

In this paper, we present the attractive characteristics of low-energy ion-implantation-
induced quantum-well intermixing of InP-based heterostructures. We demonstrate that this …

Intermixing the wells and barriers of quantum well structures generally results in an increase
in the band gap and is accompanied by changes in the refractive index. A range of …

The technique of ion‐induced quantum‐well (QW) intermixing using broad area, high
energy (2–8 MeV As4+) ion implantation has been studied in a graded‐index separate …

We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to
promote quantum-well intermixing (QWI) in double-quantum-well GaAs-AlGaAs laser …

Plasma-induced quantum well intermixing (QWI) has been developed for tuning the
bandgap of III-V compound semiconductor materials using an inductively coupled plasma …

Various applications of quantum-well intermixing, ranging from multiwavelength lasers to
complex photonic integrated circuits, are described. The fabrication of these GaAs-AlGaAs …

Quantum well (QW) intermixing has been performed using low-energy broad-area ion
implantation to increase the bandgap energy in a spatially selective manner. There is a …

Precise control over local optical and electrical characteristics across a semiconductor wafer
is a fundamental requirement for the fabrication of photonic integrated circuits. Quantum well …