Raman scattering by LO phonon-plasmon coupled modes in n-type
We have studied by means of Raman scattering the LO phonon-plasmon coupled modes in
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …
Resonant Raman scattering by LO phonons in As (x < 0.1): Alloying and interference effects
W Kauschke, M Cardona, E Bauser - Physical Review B, 1987 - APS
The resonant Raman scattering by LO and two LO phonons and LO-phonon interference
effects are studied near the E 0+ Δ 0 gap of liquid-phase-epitaxy Al x Ga 1− x As (0≤ x≤ …
effects are studied near the E 0+ Δ 0 gap of liquid-phase-epitaxy Al x Ga 1− x As (0≤ x≤ …
Raman scattering from coupled plasmon–LO-phonon modes in n-type As
T Yuasa, S Naritsuka, M Mannoh, K Shinozaki… - Physical Review B, 1986 - APS
Raman scattering by coupled plasmon–LO-phonon modes has been studied in direct-band-
gap n-type Al x Ga 1− x As epitaxial layers with various carrier concentrations. Raman …
gap n-type Al x Ga 1− x As epitaxial layers with various carrier concentrations. Raman …
Picosecond Raman Studies of the Electron-Phonon Interactions in : Nonmonotonic Dependence upon the Alloy Composition
Abstract The electron–longitudinal-optical-(LO-) phonon interaction in Al x Ga 1− x As has
been studied for the alloy composition ranging from 0.1 to 0.4 by picosecond Raman …
been studied for the alloy composition ranging from 0.1 to 0.4 by picosecond Raman …
Disorder-Activated Acoustic Mode in Raman Spectrum of
H Kawamura, R Tsu, L Esaki - Physical Review Letters, 1972 - APS
We report the observation of an acoustic phonon mode, usually not Raman active, which is
interpreted here as a disorder-activated longitudinal acoustic mode. Because of good …
interpreted here as a disorder-activated longitudinal acoustic mode. Because of good …
Optical phonon behavior in strain-free dilute Ga (As, N) studied by Raman scattering
We present a Raman-scattering study on strain-free dilute Ga (As, N) epilayers grown by
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the …
Temperature dependence of the Raman spectrum of ternary alloys
J Jiménez, E Martín, A Torres, JP Landesman - Physical Review B, 1998 - APS
We have studied the effect of the temperature on the first-order Raman spectra of Al x Ga 1−
x As alloys. The temperature induced frequency shift is studied over the full composition …
x As alloys. The temperature induced frequency shift is studied over the full composition …
Resonant Raman scattering by LO phonons in As (0.2<x<0.7): Exciton broadening and alloying effects
C Trallero-Giner, VI Gavrilenko, M Cardona - Physical Review B, 1989 - APS
The dipole-allowed resonant Raman scattering by LO phonons is studied around the E 0
gap of Al x Ga 1− x As alloys at 100 K. Six high-purity n-type Al x Ga 1− x As samples with …
gap of Al x Ga 1− x As alloys at 100 K. Six high-purity n-type Al x Ga 1− x As samples with …
Study of plasmon—LO-phonon coupling in Te-doped
OK Kim, WG Spitzer - Physical Review B, 1979 - APS
Plasmon-LO-phonon coupling in n-type Ga 1− x Al x As has been investigated by measuring
the infrared reflectivity spectra of differently doped n-type samples having x≃ 0.14, x≃ 0.30 …
the infrared reflectivity spectra of differently doped n-type samples having x≃ 0.14, x≃ 0.30 …
Raman scattering in (AlxGa1−x)0.51In0.49P quaternary alloys
M Kubo, M Mannoh, Y Takahashi, M Ogura - Applied physics letters, 1988 - pubs.aip.org
We report a Raman study of the phonon mode of (AixGa1 _x) O. 5! lno. 4YI'quaternary alloys
lattice matched to GaAs over the whole range of compositions. From the composition …
lattice matched to GaAs over the whole range of compositions. From the composition …