Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment
Strain-driven phase separation of InAs self-assembled quantum dot's InGaAs heterocapping
alloy is investigated by temperature-dependent photoluminescence (PL) spectroscopy and …
alloy is investigated by temperature-dependent photoluminescence (PL) spectroscopy and …
Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing
The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In0. 4Ga0.
6As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of …
6As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of …
Postgrowth intermixing of strain engineered InAs/GaAs quantum dots
This paper reports on the evolution of InAs/GaAs quantum dots'(QDs) intermixing process
depending on the QD position with respect to the InGaAs strain reducing layer. The …
depending on the QD position with respect to the InGaAs strain reducing layer. The …
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots
with density in the low 10 9 cm− 2 range were analyzed with transmission electron …
with density in the low 10 9 cm− 2 range were analyzed with transmission electron …
Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing
This paper reports on experimental and theoretical investigation of atyical temperature-
dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs …
dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs …
Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers
Abstract Self-organized InAs QDs have been grown by Molecular Beam Epitaxy with
different strain reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The …
different strain reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The …
Carrier dynamics of strain-engineered InAs quantum dots with (In) GaAs surrounding material
The present study reports on the optical properties of epitaxially grown InAs quantum dots
(QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in …
(QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in …
Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs
S Adhikary, N Halder… - Journal of nanoscience …, 2011 - ingentaconnect.com
The effect of rapid thermal annealing (RTA) on the optical properties of a 10 layer stacked
InAs/GaAs quantum dot (QD) heterostructure where the QDs are overgrown with a …
InAs/GaAs quantum dot (QD) heterostructure where the QDs are overgrown with a …
GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations
JM Ulloa, R Gargallo-Caballero, M Bozkurt… - Physical Review B …, 2010 - APS
The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …
dots (QDs) are shown to be strongly correlated with structural changes. The observed …
Capping InAs quantum dots with an InGaAsSb strain-reducing layer to improve optical properties and dot-size uniformity
The superior operation characteristics of quantum dot (QD) lasers with excited-state (ES)
emission, namely high saturation gain and modulation bandwidth, are advantageous for …
emission, namely high saturation gain and modulation bandwidth, are advantageous for …