We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-
InP for carrier densities between 6× 10 16 and 1× 10 19 cm− 3. A line-shape theory based …

We have studied the resonant Raman scattering by LO and two-LO phonons and LO-
phonon interference effects near the E 0+ Δ 0 gap of InP. Absolute values of the …

We have studied by means of Raman scattering the LO phonon-plasmon coupled modes in
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …

We have measured Raman scattering by coupled longitudinal-optic-phonon-plasmon
modes and photoluminescence in heavily doped n-type InP under hydrostatic pressure and …

Raman Scattering by Wave-Vector---Dependent LO-Phonon---Plasmon Modes in n-InAs Page
1 VOLUME 33,NUMBER I) PHYSiCAL RKVIKW LKTTKRS 7 OCTOBER 1/7 IL Raman …

Raman spectra from n-InP samples covering a wide range of concentrations (~ 10 16 to 10
19 cm-3) have been measured. Free-carrier concentrations deduced from the analysis of the …

Determination of the charge carrier concentration and mobility in nâ•’gap by Raman
spectroscopy Page 1 G. IRMER et al. : Charge Carrier Concent.ration and Mobility in n-GaP …

Room-temperature Raman and infrared-reflectivity measurements are performed on semi-
insulating InP doped with Fe and on n-type InP doped with Sn and S in the concentration …

Measurements are made of resonant first‐and second‐order Raman scattering by phonons
in InP for photon energies from 1.75 to 3.05 eV. The behaviour of all observed resonances …

In n-InP and n-GaAs the Raman scattering spectra from plasmon-phonon modes (PPM) with
wave vector q⋍ 10 6 cm-1 have been measured. The frequencies of PPM thus obtained are …