Two-dimensional carrier profiling using scanning spreading resistance microscopy (SSRM)
has recently been reported for Si-and InP-based structures. In this article, we report SSRM …

Scanning spreading resistance microscopy (SSRM) is a powerful tool originally developed
for measuring two-dimensional (2D) carrier distributions in Si device structures with nm …

Scanning spreading resistance microscopy (SSRM) is a promising new tool for dopant
profiling in semiconductor materials. We present the results of a SSRM study of the cross …

Scanning spreading resistance microscopy (SSRM) is a carrier profiling method based on
atomic force microscopy (AFM), which has proven its power for two-dimensional …

Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …

As emphasized in the International Technological Roadmap for Semiconductors (ITRS), two-
dimensional carrier profiling is one of the key elements in support of technology …

Scanning spreading resistance microscopy (SSRM) is an analytical technique originally
developed for measuring two-dimensional carrier distribution in Si device structures with …

Scanning spreading resistance microscopy (SSRM) is an electrical characterization tool
used for the measurement of the 2D carrier distribution in semiconductor devices. In this …

Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

This work presents the properties and applications of high vacuum scanning spreading
resistance microscopy (HV-SSRM) for two-dimensional carrier profiling. Characteristics of …