The statistical variability in nano-scaled devices due to line-edge roughness (LER) is a
major challenge for further scaling of device dimensions in multi-gate FETs. The LER in …

In aggressively scaled devices, the FinFET technology has become more prone to line edge
roughness (LER) induced threshold voltage variability. As a result, nano scale FinFET …

The line-edge roughness (LER) has become one of the dominant sources of process
variations in multi-gate transistors. The estimation of threshold voltage distribution due to …

In this paper we present a simple model to study the threshold voltage variability due to line
edge roughness (LER) for an n-channel EδDC MOS transistor. The concept of propagation …

The effects of line edge roughness (LER) of nanometer scale gate pattern on the MOS
transistor parameter fluctuations and their technology scaling are investigated using the …

A very rapid method of estimating the effect of gate-edge fluctuation on threshold voltage (V
th) variability in metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed …

In this paper, using computationally intensive 3-D simulations in a grid computing
environment, we perform a detailed study of line-edge-roughness (LER)-induced threshold …

We studied gate line edge roughness (LER) and its effect on electrical characteristics of
50nm bulk MOSFETs. Using simulation, we studied the underlying mechanism of three …

A device level way to quantitatively assess the influence of Line Edge Roughness (LER) on
different fin based structures is considered. We know FinFETs have high drive current and …

The fluctuation of the gate length corresponding to the Line Width Roughness (LWR) has the
strongest affect on the Vth variation. We have measured the characteristics width (= 35nm) of …