Inside the perpendicular spin-torque memristor
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied
currents or voltages and set to a large number of levels between two limit values. Thanks to …
currents or voltages and set to a large number of levels between two limit values. Thanks to …
[HTML][HTML] A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy
Memristors are non-volatile nano-resistors which resistance can be tuned by applied
currents or voltages and set to a large number of levels. Thanks to these properties …
currents or voltages and set to a large number of levels. Thanks to these properties …
Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture
X Zhang, W Cai, M Wang, K Cao, T Zhang… - arXiv preprint arXiv …, 2019 - arxiv.org
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and
infinite memristive behavior for large-density non-volatile memory and neuromorphic …
infinite memristive behavior for large-density non-volatile memory and neuromorphic …
Chain of magnetic tunnel junctions as a spintronic memristor
In the context of neuromorphic computation, spintronic memristors are investigated for their
use as synaptic weights. In this paper, we propose and experimentally demonstrate a …
use as synaptic weights. In this paper, we propose and experimentally demonstrate a …
Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance
M Mansueto, A Chavent, S Auffret, I Joumard, L Vila… - Nanoscale, 2021 - pubs.rsc.org
In this study, a new type of compact magnetic memristor is demonstrated. It is based on the
variation of the conductivity of a nano-sized magnetic tunnel junction as a function of the …
variation of the conductivity of a nano-sized magnetic tunnel junction as a function of the …
Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing
Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite
memristive behavior for neuromorphic computing and large‐density non‐volatile memory …
memristive behavior for neuromorphic computing and large‐density non‐volatile memory …
Spintronic memristors for computing
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and
cognitive algorithms. Traditional digital computer systems have separate logic and memory …
cognitive algorithms. Traditional digital computer systems have separate logic and memory …
Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications
M Mansueto, A Chavent, R Sousa… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
The concept of a spintronic memristor based on angular variation of Tunnel
Magnetoresistance relies on the development of an isotropically coercive free layer able to …
Magnetoresistance relies on the development of an isotropically coercive free layer able to …
Linear and symmetric conductance response of magnetic domain wall type spin-memristor for analog neuromorphic computing
T Shibata, T Shinohara, T Ashida, M Ohta… - Applied Physics …, 2020 - iopscience.iop.org
We developed a three-terminal spintronic memristor named spin-memristor for the artificial
synapse of neuromorphic devices. Current-induced domain wall (DW) motion type …
synapse of neuromorphic devices. Current-induced domain wall (DW) motion type …
The Spin Torque Lego-from spin torque nano-devices to advanced computing architectures
J Grollier - APS March Meeting Abstracts, 2013 - ui.adsabs.harvard.edu
Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought
spintronic devices to the realm of active elements. A whole class of new devices, based on …
spintronic devices to the realm of active elements. A whole class of new devices, based on …