Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …

This paper presents an analytical model of threshold voltage (V th) and subthreshold swing
(S) for a tri-gate (TG) heterojunction n-FinFET. The heterojunction is formed between the …

An analytical physically based analysis for undoped FinFET devices in the subthreshold and
near-threshold regimes has been developed by solving the 3-D Poisson equation, in which …

Design considerations of the FinFET have been investigated by three-dimensional (3-D)
simulation and analytical modeling in this paper. Short-channel effects (SCE) of the FinFET …

The gate and subthreshold drain leakage currents are investigated experimentally in triple-
gate FinFETs for power supply voltage Vdd= 1V. The gate and drain leakage currents are …

The potential variation in the channel obtained from analytical solution of three-dimensional
(3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage …

A simple analytical threshold voltage model for lightly doped tri-gate MOSFETs has been
developed, using the superposition of the threshold voltages of a symmetric and an …

An analytical compact drain current model for undoped (or lightly doped) short-channel triple-
gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum …

This paper presents a study of the structure and the characteristics of the emerging device-
SOI-FinFET. Close form models are developed to estimate the values of the device …

In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-
planar structure is experimentally studied in triple-gate FinFETs. The drain current …