Resistive switching memories (ReRAMs) are the major candidates for replacing the state-of-
the-art memory technology in future nanoelectronics. These nonvolatile memory cells are …

Cation‐based resistive‐switching memories rely on the injection and drift of metal ions in
nanoscale thin films. In insulators that do not initially contain mobile cations, such as SiO2 …

This review covers resistive random access memories which utilize redox processes and
ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are …

Resistive switching memories based on the valence change mechanism have attracted
great attention due to their potential use in future nanoelectronics. The working principle …

Resistive switching in oxides and other insulating materials provides a promising approach
to nanoscale memory devices, where the stored logic state can be changed by …

Advances in the understanding of nanoscale ionic processes in solid‐state thin films have
led to the rapid development of devices based on coupled ionic–electronic effects. For …

Many metal–insulator–metal systems show electrically induced resistive switching effects
and have therefore been proposed as the basis for future non-volatile memories. They …

Resistive switching memories (RRAMs) are an emerging research field, which is currently of
focused interest for both the interdisciplinary scientific community and industry. RRAMs are …

In contrast to classical charge-based memories, the binary information in redox-based
resistive switching devices is decoded by a change of the atomic configuration rather than …

With the aim to address the physical limits of recent non-volatile flash memory, resistive
switching memory has been intensively investigated as a strong competitor of the next …