Selectorless crossbar arrays of resistive randomaccess memory (RRAM), also known as
memristors, conduct large sneak currents during operation, which can significantly corrupt …

Resistive random-access memories made from memristor crossbar arrays could provide the
next generation of non-volatile memories. However, integrating large memristor crossbar …

Resistive random access memory (ReRAM), referred to as memristor, is an emerging
memory technology to potentially replace conventional memories, which will soon be facing …

Metal-oxide resistive random access memories with a single memristor device at the
crosspoint (1R RRAM) is a promising alternative to next generation storage technology due …

Memristive device based passive crossbar arrays hold a great promise for high-density and
non-volatile memories. A significant challenge of ultra-high density integration of these …

In this paper, a 2× 2 equivalent statistical circuit model is presented to deal with sneak
currents and random data distributions for design and analysis of nxm passive memory …

Memristive devices are promising candidates for future high-density, power-efficient
memories. The sneak path problem of purely-resistive crossbars and the inherent nanowire …

The use of memristors and resistive random access memory (ReRAM) technology to perform
logic computations, has drawn considerable attention from researchers in recent years …

Resistive random access memories (RRAMs) are favorable contenders in the race towards
future technologies. Moreover, the desirable properties of memristor-based RRAM devices …

DOI: 10.1002/aelm. 201500095 several methods reported to improve device variability. A
series resistance (RS) can act as a self-compliance during the SET operation (switching …