Mobility and coalescence of stacking fault tetrahedra in Cu

E Martínez, BP Uberuaga - Scientific Reports, 2015 - nature.com
Stacking fault tetrahedra (SFTs) are ubiquitous defects in face-centered cubic metals. They
are produced during cold work plastic deformation, quenching experiments or under …

Interaction of small mobile stacking fault tetrahedra with free surfaces, dislocations, and interfaces in Cu and Cu-Nb

E Martínez, BP Uberuaga, IJ Beyerlein - Physical Review B, 2016 - APS
The presence of stacking fault tetrahedra (SFTs) in face-centered-cubic metals substantially
modifies the material response to external loading. These defects are extremely stable with …

Dislocation-stacking fault tetrahedron interactions in Cu

BD Wirth, VV Bulatov… - J. Eng. Mater …, 2002 - asmedigitalcollection.asme.org
In copper and other face centered cubic metals, high-energy particle irradiation produces
hardening and shear localization. Post-irradiation microstructural examination in Cu reveals …

A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations

E Martinez, J Marian, A Arsenlis, M Victoria… - Philosophical …, 2008 - Taylor & Francis
We present a comprehensive dislocation dynamics (DD) study of the strength of stacking
fault tetrahedra (SFT) to screw dislocation glide in fcc Cu. Our methodology explicitly …

Molecular dynamics simulation of screw dislocation interaction with stacking fault tetrahedron in face-centered cubic Cu

HJ Lee, JH Shim, BD Wirth - Journal of Materials Research, 2007 - cambridge.org
The interaction of a gliding screw dislocation with stacking fault tetrahedron (SFT) in face-
centered cubic (fcc) copper (Cu) was studied using molecular dynamics simulations. Upon …

The formation of stacking fault tetrahedra in Al and Cu: III. Growth by expanding ledges

H Wang, DS Xu, R Yang, P Veyssière - Acta materialia, 2011 - Elsevier
Ledge expansion and the concomitant growth of a stacking fault tetrahedron (SFT) are
investigated in Al and Cu by molecular dynamics (MD) simulations by addition of vacancy …

Molecular dynamics simulation of the interaction between a mixed dislocation and a stacking fault tetrahedron

HJ Lee, BD Wirth - Philosophical Magazine, 2009 - Taylor & Francis
A high number-density of nanometer-sized stacking fault tetrahedra are commonly found
during irradiation of low stacking fault energy metals. The stacking fault tetrahedra act as …

Molecular dynamics study of the interactions between dislocation and imperfect stacking fault tetrahedron in Cu

L Saintoyant, HJ Lee, BD Wirth - Journal of nuclear materials, 2007 - Elsevier
The microstructure of irradiated face centered cubic alloys with low stacking fault energy is
distinguished by the formation of a high number density of nanometer size stacking fault …

Molecular dynamics simulations of displacement cascades in nanotwinned Cu

B Li, HY Li, SN Luo - Computational Materials Science, 2018 - Elsevier
With large-scale molecular dynamics simulations, we investigate systematically
displacement cascades in nanotwinned Cu with different twin spacings. Coherent twin …

The formation of stacking fault tetrahedra in Al and Cu: II. SFT growth by successive absorption of vacancies generated by dipole annihilation

H Wang, DS Xu, R Yang, P Veyssiere - Acta Materialia, 2011 - Elsevier
The growth of stacking fault tetrahedra (SFTs) resulting from dipole annihilation is
investigated by molecular dynamics (MD) simulations. The atomistic processes involved …