We investigate the ultrafast photoconductivity and charge-carrier transport in thermally
annealed Fe-implanted InGaAs/InP films using time-resolved terahertz spectroscopy. The …

Using time-resolved optical-pump terahertz-probe spectroscopy, we study the ultrafast
carrier dynamics in In 0.53 Ga 0.47 As: ErAs⁠, a potential candidate for 1550 nm based …

We have observed a long-lived residual photoconductivity in low-temperature-grown (LT)
InGaAs. These results have significant consequences for devices comprised of LT-InGaAs …

Through the recrystallization of an amorphous heterostructure, obtained by MeV Fe ion
implantation, we are able to tailor a standard epitaxial semiconductor material, a small gap …

We propose an Fe-doped, InGaAs-based semiconductor heterostructure optimized for the
application as an ultrafast photoconductor and investigate its optical as well as THz …

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-
implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) …

A multiple-energy, high fluence, MeV Fe ion implantation process was applied at 83 K to
heavily damage a low band gap (0.79 eV) epitaxial InGaAsP layer. Optimal rapid thermal …

The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP
grown by molecular beam epitaxy are investigated. When InGaAs: Rh is used as an ultrafast …

This letter reports the measurement of photocarrier lifetime in ErAs: InGaAs epitaxial material
grown on InP substrates. The measurement technique is ultrafast time-resolved …

Heavy ion implantation into InP and In 0.53 Ga 0.47 As and rapid thermal annealing has
been applied to produce materials with high resistivity, good mobility and ultrashort carrier …