The formation of mesoporous Ge layers with different morphologies by bipolar
electrochemical etching is reported for the first time. A detailed analysis of the effect of …

Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge
wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by …

Mesoporous germanium has received lately a growing interest in many fields. However, the
lack of flexibility and knowledge concerning its electrochemical etching remains important. In …

The extended analysis of influence of the surface hydrogen passivation degree on
morphology of mesoporous Ge (PGe) formed by Bipolar Electrochemical Etching technique …

Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide
range of potential applications. These porous Ge networks are characterized by physical …

We produce uniform mesoporous single-and multilayers on 4in. p-type Ge wafers by means
of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by …

The effect of the passivation to etching duration ratio on the bipolar electrochemical etching
of highly p-doped germanium on its pore structures has been investigated. The final goal is …

Nucleation and growth of electrochemically etched pores in Germanium (Ge) was
investigated for n-and p-type Ge single crystals with {100},{110}, and {111} orientations and …

We investigate sintering and reorganization of electrochemically etched mesoporous Ge
layers. Sintering in nitrogen, forming gas, or argon atmospheres always yields a reorganized …

Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n‐
Ge in different electrolytes was investigated. On rough surfaces pore density increases as …