The carrier localization phenomenon has been investigated for GaBiAs by photomodulated
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a …

Carrier dynamics in MBE-grown GaBi x As 1− x layers was investigated by the optical pump-–
THz probe technique. Rapid thermal annealing at temperatures up to 700 C has a dual …

The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …

GaBiAs layers with Bi content reaching 8.4% are grown by MBE technique at low
temperatures. All layers were of p-type with carrier densities ranging from 3× 10 14 to 2× 10 …

Photoreflectance (PR) and photoluminescence (PL) spectra of GaAs 1− x Bi x alloys grown
by metalorganic vapor phase epitaxy, for x up to 4.8%, were measured at temperatures …

Optical transitions in GaNAs bulk layer containing 2.2% N have been studied with
microphotoluminescence (μ-PL) and photoreflectance. At low temperatures and low …

The effects of external perturbations—such as temperature, photo-excited carrier density,
and magnetic field—on the electronic properties of Ga (AsBi) alloys are investigated in a …

We report on an investigation of optical and structural properties of as-grown and thermal
annealed GaBi x As 1− x (x= 0.012, 0.018 and 0.03) epilayers by photomodulated …

The influence of thermal annealing on optical properties and carrier lifetime of dilute
GaBixAs1‐x layers was investigated. Thick (0.5‐1.5 μm) relaxed and thin (30‐100 nm) …

We have measured the spatial distribution of the optical properties of a GaNAs (N∼ 0.8%)
epilayer to investigate the carrier recombination mechanism at both room temperature and …