We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …

We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF,
and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best …

Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …

Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM
and optical methods. The morphology, chemical composition and photoluminescence of …

Schottky diode of porous n-GaAs layers have been prepared by chemical etching of n-type
GaAs (100) substrates in (3 and 5) M of phosphoric acid (H3PO4) for 1 min. The influences …

In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …

Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …

A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (100)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …

Porous GaAs was formed by electrochemical etching of n-type GaAs wafers in HF-or HCl-
based solution with different current densities. The porous structure formation has been …