Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are
capable of processing high power at high switching frequencies with less switching losses …

Silicon carbide (SiC) and gallium nitride metal-oxide-semiconductor field-effect transistors
(MOSFETs) are capable of processing high power at high switching frequencies with less …

In this paper, a resonant gate driver for silicon carbide power MOSFET is proposed. This
resonant gate driver contains four N-MOSFETs, a resonant inductor, and a capacitor. The …

This paper proposes design and implementation of a new multiresonant gate driver circuit
for silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The …

Parasitic inductance in the gate path of a silicon carbide MOSFET places an upper limit
upon the switching speeds achievable from these devices, resulting in unnecessarily high …

The resonant gate driver is the most efficient method to reduce the gate drive loss. However,
the conventional resonant gate driver cannot be implemented for SiC power MOSFET …

Silicon carbide MOSFETs could process high power at high switching frequency with little
loss. The driving circuit produce loss, which is proportional to the switching frequency …

In this paper, a new resonant gate-drive circuit is proposed to recover a portion of the power-
MOSFET-gate energy that is typically dissipated in high-frequency converters. The proposed …

In this paper, a new resonant gate drive circuit is proposed for power MOSFETs. The
proposed circuit achieves quick turn on and turn off transition times to reduce switching loss …

At high speed operation of SiC MOSFETs, significant gate losses are present with
conventional resistive gate driver circuits. Besides, excessive electromagnetic interference …