Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the
structural changes of the graphene/germanium interface as a function of in-vacuum thermal …

For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-
compatible processes. For future application in next generation devices the accurate control …

The direct synthesis of graphene with high-quality on semiconducting germanium (Ge)
substrates has been developed recently, which has provided a promising way to integrate …

The synthesis of graphene directly on Ge and on Ge deposited on Si provides a scalable
route toward integrating graphene onto conventional semiconductors. Here, we elucidate …

Graphene was shown to reveal intriguing properties of its relativistic two-dimensional
electron gas; however, its implementation to microelectronic applications is missing to date …

Graphene has been predicted to play a role in post-silicon electronics due to the
extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals …

Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to
integrate graphene into microelectronics, but the synthesis is still accompanied by several …