We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and
AlN layers and c-oriented wurtzite GaN, AlN, and Al x Ga 1− x N (x< 0.3) layers were grown …

Infrared reflection spectroscopy is applied to state‐of‐the‐art thin film heterostructures of
group‐III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN …

Infrared polarized reflectance at three incidence angles (18°, 45°, and 75°) was measured
from 300 to 1200 cm− 1 for sapphire and GaN/sapphire at 295 K. The approximately 1.5 μm …

Micro-Raman scattering from single crystal GaN films, both free-standing and attached to
Al2O3 substrates, was performed over the temperature range from 78 to 800 K. These …

The vibrational properties of undoped α-and β-GaN epilayers on GaAs substrates have
been investigated at 300 and 77 K by far-infrared Fourier transform spectroscopy using …

Using infrared transmission and Raman spectroscopy, we have studied the optical phonon
modes of GaN layers grown on GaAs001 substrates by molecular beam epitaxy. The crystal …

Growth and fabrication of GaN-based optoelectronic devices on silicon substrates may offer
a lot of advantages over those grown on conventional sapphire substrate. These include the …

This paper assesses nonpolar m-and a-plane GaN/Al (Ga) N multi-quantum-wells grown on
bulk GaN for intersubband optoelectronics in the short-and mid-wavelength infrared ranges …

We have experimentally studied the birefringence of wurtzite GaN grown on a sapphire
substrate. The measurements were done with single-mode GaN/AlGaN planar optical …

We report on Raman scattering by phonon pairs in GaN films grown on sapphire substrates
by plasma-enhanced molecular beam epitaxy. The first order data are consistent with results …