Metal–insulator–metal (MIM) devices based on titanium dioxide thin films exhibit resistive
switching behavior (RS); ie, they have the ability to switch the electrical resistance between …

Titanium dioxide thin films have attracted increasing attention due to their potential in next-
generation memory devices. Of particular interest are applications in resistive random …

TiO2 is commonly used as the active switching layer in resistive random access memory.
The electrical characteristics of these devices are directly related to the fundamental …

Towards developing next generation scalable TiO 2-based resistive switching (RS) memory
devices, the efficacy of 50 keV Ar+-ion irradiation to achieve self-organized nano-channel …

Crossbar‐type bipolar resistive memory devices based on low‐temperature amorphous
TiO2 (a‐TiO2) thin films are very promising devices for flexible nonvolatile memory …

Oxygen vacancies (VO) have profound effects on the physical and chemical performance of
devices based on oxide materials. This is particularly true in the case of oxide-based …

Epitaxial TiO2 thin films were grown by radio-frequency magnetron sputtering on conductive
Nb-SrTiO3 substrates. X-ray photoelectron spectroscopy reveals that the oxygen vacancies …

摘要 The uniformity of resistive switching parameters is important to resistive random access
memory (RRAM) device, development. This work reports a remarkably improved uniformity …

The memory performance of titanium oxide (TiO 2− x)-based resistive memories containing
an ultra thin reactive Ti top electrode can be greatly enhanced. Very good switching memory …

In this work, we demonstrate that TiO 2− x based Resistive Random Access Memory devices
can function without an initial electroforming process and a wide range of switching ratios …