Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates
We report the growth by molecular beam epitaxy of Ga Bi x As 1− x epilayers on (311) B
GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron …
GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron …
Molecular beam epitaxy growth of
GaAs 1− x Bi x epilayers with bismuth concentrations up to x= 3.1% were grown on GaAs by
molecular beam epitaxy. The Bi content in the films was measured by Rutherford …
molecular beam epitaxy. The Bi content in the films was measured by Rutherford …
Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy
Y Takehara, M Yoshimoto, W Huang… - Japanese journal of …, 2006 - iopscience.iop.org
GaAs 1-x Bi x alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice
constants perpendicular and parallel to the surface of epilayers were estimated by high …
constants perpendicular and parallel to the surface of epilayers were estimated by high …
Metastable GaAsBi alloy grown by molecular beam epitaxy
M Yoshimoto, S Murata, A Chayahara… - Japanese Journal of …, 2003 - iopscience.iop.org
GaAs 1-x Bi x has been grown at a substrate temperature (T sub) between 350 and 410 C by
molecular beam epitaxy. The relationship between GaBi molar fraction (x) evaluated by …
molecular beam epitaxy. The relationship between GaBi molar fraction (x) evaluated by …
Atomic ordering and phase separation in MBE GaAs1− xBix
Transmission electron microscopy studies of GaAs 1− x Bi x layers grown at low temperature
by molecular beam epitaxy have revealed evidence of both atomic ordering and phase …
by molecular beam epitaxy have revealed evidence of both atomic ordering and phase …
Growth of high Bi concentration GaAs1− xBix by molecular beam epitaxy
The incorporation of Bi is investigated in the molecular beam epitaxy growth of GaAs 1− x Bi
x. Bi content increases rapidly as the As 2: Ga flux ratio is lowered to 0.5 and then saturates …
x. Bi content increases rapidly as the As 2: Ga flux ratio is lowered to 0.5 and then saturates …
Variation of lattice constant and cluster formation in GaAsBi
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs
We report on an investigation of optical and structural properties of as-grown and thermal
annealed GaBi x As 1− x (x= 0.012, 0.018 and 0.03) epilayers by photomodulated …
annealed GaBi x As 1− x (x= 0.012, 0.018 and 0.03) epilayers by photomodulated …
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1− xBix
We describe how the Bi content of Ga As 1− x Bi x epilayers grown on GaAs can be
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …
Molecular beam epitaxy growth of GaAsBi using As2 and As4
RD Richards, F Bastiman, CJ Hunter, DF Mendes… - Journal of Crystal …, 2014 - Elsevier
Abstract 100 nm thick GaAsBi layers were grown at a range of temperatures using both As 2
and As 4. Measurements of Bi incorporation based on room temperature …
and As 4. Measurements of Bi incorporation based on room temperature …