Isochronal and isothermal annealing treatments were carried out on GaAsN films grown by
chemical beam epitaxy to clarify the evolution of a nonradiative recombination center, at an …

The origin of a N-related recombination center (E1), at around 0.33 eV below the conduction
band minimum (CBM) of chemical beam epitaxy (CBE) grown GaAsN, is discussed based …

Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon
electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the …

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN
epilayers on (311) A/B and (100) GaAs substrates. A long room-temperature (RT) PL …

Optically detected magnetic resonance measurements are carried out to study formation of
Ga interstitial-related defects in Ga (In) NAs alloys. The defects, which are among dominant …

A nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band
minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination …

Radiative recombination at low temperatures in GaAsN is often associated with localized
excitons. In this short note, we report results from high-resolution time-resolved …

With only 3% of N and 9% of In, InGaAsN with a band gap of 1.04 eV was obtained and
could be lattice matched to GaAs and Ge. This dilute nitride semiconductor has been …

Decreasing the growth rate in chemical beam epitaxy (CBE) is effective to improve the hole
mobility and minority-carrier lifetime in p-GaAsN films. The hole mobility increased from 120 …

In this paper, recombination dynamics in GaAs 1-x N x semiconductor alloy with a nitrogen
content of 1.6% are investigated using Photoluminescence (PL) and Time-Resolved …