Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility
transistors having identical breakdown voltages but with different field plate (FP) lengths …

This paper reviews the physical mechanisms responsible for breakdown current in
AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison …

Using a dual-gate structure, we have investigated the impact of gate-stress position on the
current collapse behavior of AlGaN/GaN high-electron-mobility transistors (HEMTs) without …

2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors
(HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer …

Drain current collapse in AlGaN/GaN HEMTs has been studied systematically by applying
bias stress to the device. The collapse was suppressed by light illumination with energy …

During off-state, the influence of surface-trapped electron charges induced by high-field
stress near the gate electrode of AlGaN/GaN power high-electron mobility transistor devices …

This letter studies the current collapse phenomenon during switching in p-GaN gate
AlGaN/GaN high-electron-mobility transistors. It is found that channel hot electrons play a …

The effect of Si3N4 surface passivation on breakdown of AlGaN/GaN high-electron-mobility
transistors was studied in detail by investigating dependences of the off-state breakdown …

AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated
using drain-current injection techniques with different injection current levels. Competitions …

The physical mechanisms underlying RF current-collapse effects in AlGaN-GaN high-
electron-mobility transistors are investigated by means of measurements and numerical …