There is described a method of manufacturing a substrate for an optoelectronic device. The
method has the steps of: supporting a first layer of a first crystalline material on a second …

An optoelectronic device is disclosed. In an embodiment the device includes a
semiconductor crystal with a surface having a first lateral region, a second lateral region and …

(57) ABSTRACT A method of fabricating an epitaxial device, comprising: providing a
Substrate having a first Surface and a normal direction; epitaxially forming a first transition …

There is described a method of manufacturing an optoelectronic device. The method
generally has: etching a wafer of monocrystalline germanium, said etching forming a given …

The aspects of the disclosed embodiments relates to an optoelectronic device including a
substrate layer having a first surface plane and a second surface plane opposite and …

In various embodiments, a method for producing an optoelectronic device is provided. The
method may include in the following order: providing a substrate, having a first state having …

An optoelectronic device comprising a substrate comprising a groove having a first and a
second face. The first face of the groove is coated with a semiconductor material and the …

An optoelectronic device and method of producing the same. The optoelectronic device
comprising a substrate having a first and a second substantially planar face and an aperture …

Various embodiments may relate to a process for producing an optoelectronic component. In
the process, a carrier is provided. A first electrode is formed upon the carrier. An optically …

US9570649B2 - Methods for fabricating a plurality of optoelectronic devices from a wafer that
includes a plurality of light detector sensor areas - Google Patents US9570649B2 - Methods for …