Diamond has unique physical properties, which show great promise for applications in the
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …

A diamond metal-semiconductor field-effect transistor (MESFET) with a Pt Schottky gate was
fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain …

Diamond metal oxide semiconductor field effect transistors (MOSFETs) on high-quality
heteroepitaxial diamond (Kenzan diamond®) with NO 2 p-type doping and an Al 2 O 3 …

Using the NO 2 adsorption and Al 2 O 3 passivation technique, we improved the thermal
stability of hydrogen-terminated diamond field-effect transistors (FETs) and then …

The lack of large-area single-crystal diamond wafers has led us to downscale diamond
electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) …

Diamond is a very promising material for power electronics and electrical energy
management devices. Several architectures have been implemented in the past for the …

Diamond has been explored to develop prototype field-effect transistors (FETs). At present,
various architectures that are suited to high temperature and high-radiation environments …

A p-type deep-depletion mode monocrystalline diamond MOSFET is demonstrated, with a
190-nm-thick controllable channel. Such a device offers new opportunities for a better …

We report great improvement of RF output power for H-terminated diamond field-effect
transistors (FETs). For the FET device with a gate width of 1 mm and a gate length of 0.4 μm …

A normally OFF hydrogen-terminated diamond (H-terminated diamond) field-effect transistor
(FET) has been successfully achieved with Ti/TiO x gate materials. A 5-nm Ti film was …