Hot Carrier Reliability in 45 nm Strained Si/relaxed Si1−xGex CMOS Based SRAM Cell
Hot Carrier Injection is one of the serious reliability issues of the NMOS transistors in the
nanoscale regime. The effect of channel strain on hot carrier reliability of 45 nm strained …
nanoscale regime. The effect of channel strain on hot carrier reliability of 45 nm strained …
Analysis of SRAM cell characteristics based on high-k metal-gate strained Si/Si1−xGex MOSFET with consideration of NBTI/PBTI
B Ebrahimi, A Afzali-Kusha - 2012 International Conference on …, 2012 - ieeexplore.ieee.org
In this paper, we investigate the characteristics of SRAM cells with high-k metal-gate Si/Si 1-
x Ge x dual channel structures. The characteristics are compared with those of the …
x Ge x dual channel structures. The characteristics are compared with those of the …
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs
OM Alatise, KSK Kwa, SH Olsen, AG O'Neill - Solid-State Electronics, 2010 - Elsevier
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on
the analog performance of strained Si nMOSFETs is investigated. The negative drain …
the analog performance of strained Si nMOSFETs is investigated. The negative drain …
Impact of STI stress on hot carrier degradation in 5V NMOSFET
H Jiang, HK Yap, SM Pandey, JS Park… - 2011 IEEE …, 2011 - ieeexplore.ieee.org
The effects of shallow trench isolation (STI) induced mechanical stress on hot carrier
degradation of 5V NMOSFET with different source (S)/drain (D) areas are studied. It is found …
degradation of 5V NMOSFET with different source (S)/drain (D) areas are studied. It is found …
An energy-efficient tensile-strained Ge/InGaAs TFET 7T SRAM cell architecture for ultralow-voltage applications
In this paper, we benchmark the read/write performance and standby power of several static
random access memory (SRAM) cell architectures utilizing 45-nm Si CMOS MOSFET and/or …
random access memory (SRAM) cell architectures utilizing 45-nm Si CMOS MOSFET and/or …
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs
Tensile-strained Si on relaxed Si1− xGex buffers has emerged as an important channel
material for improving CMOS performance. The ability of tensile-strained Si to dramatically …
material for improving CMOS performance. The ability of tensile-strained Si to dramatically …
Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs
CH Liu, TM Pan - IEEE transactions on electron devices, 2007 - ieeexplore.ieee.org
In this brief, the IV characteristics and reliability degradations for both bulk-Si and strained-Si
with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier …
with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier …
Tradeoff between short channel effect and mobility in strained-Si nMOSFETs
YP Wang, SJ Chang - Semiconductor science and technology, 2006 - iopscience.iop.org
A strained-Si CMOS technology with improved immunity to short channel effects (SCE) and
reduced defect density was demonstrated at a gate length of 80 nm. The driving current was …
reduced defect density was demonstrated at a gate length of 80 nm. The driving current was …
Analysis of nanoscale strained-Si/SiGe MOSFETs including source/drain series resistance through a multi-iterative technique
A Kumari, S Kumar - … Conference on VLSI Design and 2014 …, 2014 - ieeexplore.ieee.org
As one of the important technological boosters, strain in Metal-Oxide-Semiconductor Field-
Effect-Transistors (MOSFETs) was first introduced in the 90 nm node and it has been …
Effect-Transistors (MOSFETs) was first introduced in the 90 nm node and it has been …
Influence of Electrical Stress on Total Dose Radiation Effect of the Strained Si Nano Nmosfet
M Hao, J Li, Y Wang, D Chen, H Wu, Z Wen… - Available at SSRN … - papers.ssrn.com
Base on Carrier transport mechanism of strained Si Nano N-type metal oxide semiconductor
field-effect transistor (NMOSFET) under γ-ray irradiation conditions, which revealed the …
field-effect transistor (NMOSFET) under γ-ray irradiation conditions, which revealed the …