An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

This book comprehensively covers the areas of materials growth, characterisation and
descriptions for the new devices in siliconheterostructure material systems. In recent years …

▪ Abstract We review recent advances in our understanding of the epitaxial growth and
properties of SiGe/Si heterostructures for applications in high-speed field-effect transistors …

Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

The use of strained layer epitaxy to grow high-quality Ge/sub x/Si/sub 1-x//Si
heterostructures and their application to a wide range of heterostructure devices are …

The first book to deal with the design and optimization of transistors made from strained
layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct …

Despite the dominant position of silicon in semiconductor electronics, its use is ultimately
limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy …

SiGe is having a major impact in device electronics. The most mature application is the SiGe
BiCMOS technology which is in production throughout the world. The areas of most rapid …

This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

Recent developments in strained layer epitaxial systems are reviewed. Their interest stems
primarily from the additional degree of freedom that strained layers provide in the design of …