The paper proposes scaling effect of number of fingers (N) and effective gate width (w eff) on
model parameters and subsequently investigate the effect on RF performance …

This letter reports on AlGaN/GaN high-electron mobility transistors (HEMTs) on high-
resistive silicon substrate using a modified Small-signal model to improve the simulation …

In this letter, we proposed the small-signal models of AlGaN/GaN fin-shaped field-effect
transistors (FinFETs) and AlGaN/GaN high electron mobility transistors (HEMTs). The …

In this paper, we aim to present a surface potential based model for GaN High Electron
Mobility Transistors. The analytical model is computationally efficient and can be accurately …

This paper reports on scalable small signal modeling of AlGaN/GaN high-electron-mobility
transistors (HEMTs) based on distributed gate resistance model. A distributed gate …

This paper proposes a modified scalable model considering kink effect for high-power
Gallium Nitride (GaN) high-electron-mobility-transistors (HEMTs). Fixtures that can withstand …

This paper studies the large signal modeling of Gallium Nitride (GaN) High Electron Mobility
Transistor (HEMT) and optimizes a nonlinear model of GaN HEMT that takes into account …

The role of device modeling in RF circuit has received increased attention across a number
of disciplines in recent years. Consequently, there are higher requirements on the accuracy …

In this paper, a new optimization based frequency piecewise small-signal model for Gallium
nitride (GaN) high electron mobility transistor (HEMT) is proposed. Different from the classic …

This paper develops and presents a CAD deployability of small-signal model of Gallium
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …