This study focuses on the etching characteristics of a TiN hard mask in terms of etch rate and
faceting when using a dielectric etch process. The etching experiments have been …

A study of the impact of physical vapor deposition conditions on the etch properties of TiN
has been conducted using a transformer coupled plasma. This work focuses only on a Cl 2 …

The differences between Cl 2 and F-based dry etching are compared in this article.
Inductively coupled plasma sources have been used to generate plasmas using both Cl 2 …

Deep trench etching of silicon was investigated as a function of platen power, operational
pressure and the SF6: C4F8 gas flow rate. Their effects on the etch rate, etch profile and …

The dependence of the bottom etch profile on the sidewall angle in the CF 4 plasma etching
of an SiO 2 film was investigated using a Faraday cage, which allowed ions to impinge on …

In this study, we developed a method to qualify the plasma etching result in high-aspect-ratio
trench with ion tilting using the natural sheath curvature at the wafer edge. Etching was …

This work focuses on the formation of residues that grow on a metallic-hard mask after
etching of porous low-k materials in fluorocarbon-based plasmas. The residue growth, which …

Low dielectric constant materials (low-k) are used as interlevel dielectrics in integrated
circuits. This paper concerns the etching process of these materials in high density plasma …

The variation of metal etch rate with spacing between metal lines was measured from
scanning electron microscopy micrographs of TiN/Al–0.5% Cu/TiN wafers etched in a high …

For the next technological generations of integrated circuits, the traditional challenges faced
by etch plasmas (profile control, selectivity, critical dimensions, uniformity, defects,…) …