We demonstrate efficient, polarized and monolithic white semipolar (20–21) InGaN light-
emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template …

We demonstrate a simple method to fabricate efficient, electrically driven, polarized, and
phosphor-free white semipolar (20-21) InGaN light-emitting diodes (LEDs) by adopting a top …

We investigated the electrical and optical performances of semipolar (11-22) InGaN green
µLEDs with a size ranging from 20× 20 µm^ 2 to 100× 100 µm^ 2, grown on a low defect …

We demonstrate efficient semipolar (11–22) 550 nm yellow/green InGaN light-emitting
diodes (LEDs) with In0. 03Ga0. 97N barriers on low defect density (11–22) GaN/patterned …

Monolithic multi‐color light‐emitting diodes (LEDs) offer numerous advantages as multi‐
functional lighting sources. However, the achievement of full‐color monolithic LEDs …

The light-emitting diode (LED) is among promising candidates of light sources in visible light
communication (VLC); however, strong internal polarization fields in common c-plane LEDs …

We demonstrate a monolithic InGaN light-emitting diode (LED) that emits red, green, and
blue (RGB) light. The proposed LED has a simple structure with stacking RGB light-emitting …

Visible light communication requires III-nitride LEDs with a high modulation bandwidth but
have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with …

We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes
(LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical …

High‐efficiency green‐yellow InGaN‐based light‐emitting diodes (LEDs) were grown by
metal organic chemical vapor deposition on conventional c‐plane sapphire (0001) …