L Gao, Q Ren, J Sun, ST Han, Y Zhou - Journal of Materials Chemistry …, 2021 - pubs.rsc.org
This article presents a review of the current development and challenges in memristor modeling. We review the mechanisms of memristive devices based on various …
F Corinto, A Ascoli - IEEE Transactions on Circuits and Systems …, 2012 - ieeexplore.ieee.org
A deep theoretical discussion proves that in Joglekar's and Biolek's models the memductance-flux relation of a memristor driven by a sign-varying voltage source may only …
The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years ago, but we just recently demonstrated both an intentional material system and an analytical …
Memristors have been proposed for a number of applications from nonvolatile memory to neuromorphic systems. Unlike conventional devices based solely on electron transport …
A Ascoli, F Corinto, V Senger… - IEEE Circuits and …, 2013 - ieeexplore.ieee.org
Since the 2008-dated discovery of memristor behavior at the nano-scale, Hewlett Packard is credited for, a large deal of efforts have been spent in the research community to derive a …
Resistive switching devices (also termed memristive devices or memristors) are two-terminal nonlinear dynamic electronic devices that can have broad applications in the fields of …
The nonvolatile memory property of a memristor enables the realization of new methods for a variety of computational engines ranging from innovative memristive-based neuromorphic …
Structures composed of transition metal oxides can display a rich variety of electronic and magnetic properties including superconductivity, multiferroic behavior, and colossal …
A Ascoli, R Tetzlaff, LO Chua… - … on Circuits and …, 2016 - ieeexplore.ieee.org
This work presents a detailed study of the nonlinear dynamics of a tantalum oxide memristor recently fabricated at Hewlett Packard Labs. Our investigations uncover direct current, quasi …