Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Induced by Aggregated Substitutional Cr Atoms
With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi 2 Se 3 …
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi 2 Se 3 …
Robust Gapless Surface State and Rashba-Splitting Bands upon Surface Deposition of Magnetic Cr on Bi2Se3
The interaction between magnetic impurities and the gapless surface state is of critical
importance for realizing novel quantum phenomena and new functionalities in topological …
importance for realizing novel quantum phenomena and new functionalities in topological …
Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy
Scanning tunneling spectroscopic studies of Bi2Se3 epitaxial films on Si (111) substrates
reveal highly localized unitary impurity resonances associated with non-magnetic quantum …
reveal highly localized unitary impurity resonances associated with non-magnetic quantum …
Structural defects and electronic properties of the Cu-doped topological insulator Bi
Motivated by the occurrence of superconductivity transition in Cu-doped topological
insulator Bi 2 Se 3, we perform a combined study of low temperature scanning tunneling …
insulator Bi 2 Se 3, we perform a combined study of low temperature scanning tunneling …
Controllable magnetic doping of the surface state of a topological insulator
A combined experimental and theoretical study of doping individual Fe atoms into Bi 2 Se 3
is presented. It is shown through a scanning tunneling microscopy study that single Fe …
is presented. It is shown through a scanning tunneling microscopy study that single Fe …
Tuning the Dirac Point Position in via Surface Carbon Doping
Angular resolved photoemission spectroscopy in combination with ab initio calculations
show that trace amounts of carbon doping of the Bi 2 Se 3 surface allows the controlled shift …
show that trace amounts of carbon doping of the Bi 2 Se 3 surface allows the controlled shift …
Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films
With molecular beam epitaxy, we grew uniformly vanadium-doped Bi2Se3 films which
exhibit ferromagnetism with perpendicular magnetic anisotropy. A systematic study on the …
exhibit ferromagnetism with perpendicular magnetic anisotropy. A systematic study on the …
Rashba Spin-Splitting Control at the Surface of the Topological Insulator
The electronic structure of Bi 2 Se 3 is studied by angle-resolved photoemission and density
functional theory. We show that the instability of the surface electronic properties, observed …
functional theory. We show that the instability of the surface electronic properties, observed …
Spin texture and magnetic anisotropy of Co impurities in BiSe topological insulators
Based upon first-principles methods, we investigate the magnetic anisotropy and spin
texture of Co impurities embedded at the interlayer van der Waals (vdW) spacings and onto …
texture of Co impurities embedded at the interlayer van der Waals (vdW) spacings and onto …
Topological Dangling Bonds with Large Spin Splitting and Enhanced Spin Polarization on the Surfaces of Bi2Se3
We investigate the topological surface state properties at various surface cleaves in the
topological insulator Bi2Se3, via first principles calculations and scanning tunneling …
topological insulator Bi2Se3, via first principles calculations and scanning tunneling …