… of 10 kV-15 kV SiC modules is presented. Furthermore, a performance comparison of HV
10 kV-15 kV SiC modules and HV switch using series connected 1.7 kV SiC MOSFETs is …

… PERFORMANCE We also characterized the switching performance of the 10 kV/20 A and
the 15 kV/10 A … A comparison of device characteristics between SiC MOSFETs and a 6.5 …

… using a 10 kV blocking switch. HV SiC devices such as 6.5 kV and 10 kV SiC MOSFETs
are still in their nascency and being used in research applications, whereas 3.3 kV SiC …

… 1(c) shows the 15-kV SiC JBS diode module made using two 10-kV SiC JBS diode chips …
of 15-kV SiC MOSFET and 15-kV SiC IGBT devices. The performance comparison of these two …

… of 15 kV Silicon Carbide (SiC) IGBT devices and a series connection of 10 kV/15 kV Silicon
… ) MOSFET devices in two separate independent cases and their experimental comparison. …

… This underpins the extremely good performance of the 10 kV SiC MOSFET technology, or
in other words, as long as RDS,ON does not scale better than quadratically with the blocking …

… It is worth to note that the IGBT used for comparisons is IXBF10N300C of IXYS, and the
demonstrated switching data (which are used in the next section for converter-level comparison …

… Although significant performance advantages can be obtained by utilising … , 5 kV trench-ICBT
devices and Sic pin diodes offers the most cost-effective route to a highperformance 10 kV, …

… exciting, no direct quantitative comparison of a fully rated three-… such a comparison of an
exemplary 1000kVA, 10kV/400V … with respect to four key performance characteristics: weight, …

… is mainly based on analysing the performance limits of the converters output characteristics
… to a 6.6kV drive application supplying quadratic torque loads and using 4.5kV IGBT modules…